Disorder-induced Metal-insulator Transitions: a Quantum Cluster Study

George Boktor, and Dr. Hanna Terletska, Department of Physics and Astronomy, Middle Tennessee State University, 1301 E Main St, Murfreesboro, TN 37132

Disorder, in the form of impurities and defects, is a common feature of modern quantum materials. In fact, disorder, can be used to change the properties of modern materials. For example, disorder-induced Anderson localization, can control the conducting properties of a system. I.e., by changing the amount of impurities in the material, one can turn the conductor into an insulator. In our research, we have conducted a systematic numerical study of how to study such electron localization and the metal-insulator transition in a three-dimensional Anderson model for two different kinds of disorder, the box, and binary disorder. We have used the quantum cluster typical medium theory to determine the critical values of disorder needed to make the phase transition to occur.

Additional Abstract Information

Presenter: George Boktor

Institution: Middle Tennessee State University

Type: Poster

Subject: Physics/Astronomy

Status: Approved

Time and Location

Session: Poster 9
Date/Time: Wed 12:00pm-1:00pm
Session Number: 6116