The following navigation utilizes arrow, enter, escape, and space bar key commands. Left and right arrows move through main tier links and expand / close menus in sub tiers. Up and Down arrows will open main tier menus and toggle through sub tier links. Enter and space open menus and escape closes them as well. Tab will move on to the next part of the site rather than go through menu items.
George Boktor, and Dr. Hanna Terletska, Department of Physics and Astronomy, Middle Tennessee State University, 1301 E Main St, Murfreesboro, TN 37132
Disorder, in the form of impurities and defects, is a common feature of modern quantum materials. In fact, disorder, can be used to change the properties of modern materials. For example, disorder-induced Anderson localization, can control the conducting properties of a system. I.e., by changing the amount of impurities in the material, one can turn the conductor into an insulator. In our research, we have conducted a systematic numerical study of how to study such electron localization and the metal-insulator transition in a three-dimensional Anderson model for two different kinds of disorder, the box, and binary disorder. We have used the quantum cluster typical medium theory to determine the critical values of disorder needed to make the phase transition to occur.
Presenter: George Boktor
Institution: Middle Tennessee State University
Type: Poster
Subject: Physics/Astronomy
Status: Approved